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Optical properties of nanocrystalline WO3 and WO3-x thin films prepared by DC magnetron sputtering

机译:直流磁控溅射制备纳米晶WO3和WO3-x薄膜的光学性质

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摘要

The optical properties of tungsten trioxide thin films prepared by DC magnetron sputtering, withdifferent oxygen vacancy (Vo) concentration, have been studied by spectrophotometry andphotoluminescence (PL) emission spectroscopy. Absorption and PL spectra show that the filmsexhibit similar band gap energies, Eg 2.9 eV. The absorption spectra of the films show twopronounced absorption bands in the near-infrared region. One peak (P1) is located atapproximately 0.7 eV, independent of Vo concentration. A second peak (P2) shifts from 0.96 eV to1.16 eV with decreasing Vo concentration. Peak P1 is assigned to polaron absorption due totransitions between tungsten sites (W5þ!W6þ), or an optical transition from a neutral vacancystate to the conduction band, Vo0!W6þ. The origin of peak P2 is more uncertain but may involveþ1 and þ2 charged vacancy sites. The PL spectra show several emission bands in the range 2.07 to3.10 eV in the more sub-stoichiometric and 2.40 to 3.02 eV in the less sub-stoichiometric films.The low energy emission bands agree well with calculated optical transition energies of oxygenvacancy sites, with dominant contribution from neutral and singly charged vacancies in the lesssub-stoichiometric films, and additional contributions from doubly charged vacancy sites in themore sub-stoichiometric films.
机译:通过分光光度法和光致发光(PL)发射光谱法研究了直流磁控溅射制备的三氧化钨薄膜的光学性质,其中氧空位(Vo)的浓度不同。吸收光谱和PL光谱表明,该膜表现出相似的带隙能,例如2.9 eV。薄膜的吸收光谱在近红外区域显示两个明显的吸收带。一个峰值(P1)位于大约0.7 eV,与Vo浓度无关。随着Vo浓度的降低,第二个峰值(P2)从0.96 eV变为1.16 eV。由于钨位点之间的跃迁(W5→W6→),或从中性空位态到导带Vo0→W6→的光学跃迁,峰P1被分配给极化子吸收。 P2峰的起源尚不确定,但可能涉及þ1和þ2带电的空位。 PL光谱显示在较高化学计量比的薄膜中有几个发射带,范围在2.07至3.10 eV之间,在较低化学计量比的膜中显示在2.40至3.02 eV范围内。低能带与计算出的氧空位的光学跃迁能很好地吻合,次化学计量比较低的薄膜中,中性和单电荷空位占主导地位,次化学计量比薄膜中具有双电荷的空位则产生额外贡献。

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